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Jastrzeske, J. Lagowski, and H. C. Gatos, “Quantitative Dekrmination of the Carrier Concentration Distribution in Semiconductors by Scanning IR Absorption: Si,” 1. Elecfrothem. , vol. 126, no. 2, pp. 2-263, February 1879. [3] T. Motooka, T. Warabisako, T. Tokuyama, and T. Watanabe, “Optical Measurement of Carrier Profiles in Silicon,” 1. ElecfrocAem. , vol. 131, no. 2. pp. 174-179, January 1984. 14 P. Stallhofer and D. Huber, “Oxygen and Carbon Measurements on Silicon Slices by the IB Method,” Solid State Technology, vol.

ElecfrocAem. , vol. 131, no. 2. pp. 174-179, January 1984. 14 P. Stallhofer and D. Huber, “Oxygen and Carbon Measurements on Silicon Slices by the IB Method,” Solid State Technology, vol. 26, no. 11, pp. 233-237, November 1933. [5] I. H. Cboi and K. D. Wise, “A Silicon-Thennopile-Based Infrared Sensing Array for use in Automated Manufacturing,” IEEE Tran. Electron Deviccu, vol. ED-33, no. 1, pp. 72-79, January 1936. 161 G. E. Crook and B. G. Streetman, “Laser-Based Structure Studies of Silicon and Gallium Arsenide,” IEEE Circuits ond Devices Magazine, vol.

New front end &t&ion techniques Most of the surface inspection work today is done using variations on optical microscopy, ellipsometry, total integrated scattering, and stylus techniques. There are enhancements and alternatives which could be fruitful. 0 Parallel optical processes looks very attractive because of its high information InSystems has explored holography for mask inspection. opaque surfaces. processing rate. Similar techniques might be applied to l Confocal laser microscopy looks promising for accurate non-contact height and lateral metrology.

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