By Prof. Anthony C. Jones, Prof. Paul O'Brien(auth.)

Chemical progress equipment of digital fabrics are the keystone of microelectronic machine processing. This publication discusses the functions of metalorganic chemistry for the vapor section deposition of compound semiconductors. Vapor part tools used for semiconductor deposition and the fabrics houses that make the organometallic precursors invaluable within the electronics are mentioned for quite a few materials.

subject matters included:

* concepts for compound semiconductor growth
* metalorganic precursors for III-V MOVPE
* metalorganic precursors for II-VI MOVPE
* single-source precursors
* chemical beam epitaxy
* atomic layer epitaxy

a number of beneficial appendixes and a significantly chosen, up to date record of references around off this sensible instruction manual for fabrics scientists, solid-state and organometallic chemists, and engineers.

Content:
Chapter 1 uncomplicated suggestions (pages 1–42):
Chapter 2 Precursor Chemistry (pages 43–98):
Chapter three MOVPE of III–V Compounds (pages 99–186):
Chapter four MOVPE of II–VI Compounds (pages 187–228):
Chapter five Metalorganic Precursors for Chemical Beam Epitaxy (pages 229–272):
Chapter 6 Atomic Layer Epitaxy (pages 273–286):
Chapter 7 the only resource method of the Deposition of Compound Semiconducting fabrics by way of MOCVD and comparable tools (pages 288–312):

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Extra resources for CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications

Example text

The hybrid technique of CBE aims to combine the advantages of MOVPE with those of MBE. Although crystal growth occurs in a UHV environment, the metalorganic Group I11 precursors and gaseous Group V sources are now external to the system facilitating replenishment and greatly decreasing reactor ‘down-time’. Flow in the growth chamber is still in the molecular regime - retaining the use of shutters, and in situ masks (see Fig. 1-28). A particular advantage of CBE or MOMBE compared with MOVPE is that the UHV conditions permit the use of in-situ surface science diagnostic techniques, such as reflection high energy electron diffraction (RHEED), residual gas analysis, Auger electron spectroscopy and modulated beam mass spectroscopy (MBMS).

Matrix element source for Sb-based 111-V alloys. ) Matrix element sources for wide-band gap 11-VI alloys. n-type dopant sources for 111-V alloys. 1) Base-free metal IlIA alkyls VIA 44 2 Precursor Chemistry Table 2-1. Continued Precursor class 2) Metal alkyl adducts Group Structure Applications TeR, (R=Me, Et, i-Pr) Matrix element source for narrowband gap 11-VI alloys. (IVA) SnR, (R=Me, Et) Occasional use as n-type dopant for 111-V alloys. Source for IV-VI semiconductors. IIIA R,ML(M=Al, Ga, In; R=Me, Et, i-Pr; L=NR,, PR,) Safer and less reactive sources for 111-V alloys.

Comparison of standard enthalpies in kJ/mol and meanbond enthalpies E (M-C) in kJ/mol of methyl derivatives in the gas phase with values E (M-X), X = CI, 0. m n me2 M Zn Cd Hg A@ SO 106 94 Group N MMe, MMe3 E M A@ E M AH? f. V MMe, - B-0 B-CI A1-0 AI-CI E 24 314 -101 276 13 229 32 214 194 141 30 1 274 The synthesis and properties of such precursors form the basis of this chapter. However, some general comments on the properties of metal alkyls are appropriate. Important thermodynamic properties are summarized in Table 2-2.

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